政大機構典藏-National Chengchi University Institutional Repository(NCCUR):Item 140.119/69234

政大機構典藏-National Chengchi University Institutional Repository(NCCUR):Item 140.119/69234

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政大典藏 > College of Science > Graduate Institute of Applied Physics > Theses > Item 140.119/69234

Please use this identifier to cite or link to this item: https://nccur.lib.nccu.edu.tw/handle/140.119/69234

Title:	鎳鈀,鎳銅多層膜界面異向性磁阻 Interfacial anisotropic magnetoresistance of Ni/Pd and Ni/Cu multilayers
Authors:	李信甫 Lee, Hsin Fu
Contributors:	李尚凡 Lee, Shang Fan 李信甫 Lee, Hsin Fu
Keywords:	多層膜異向性磁阻 multilayers anisotropic magnetoresistance
Date:	2013
Issue Date:	2014-08-25 15:23:19 (UTC+8)
Abstract:	在磁性材料中的電阻率會隨著磁場與電流的夾角不同而改變且磁場平行於電流時會大於磁場垂直於電流時的值(ρH‖I > ρH⊥I)，此現象稱作異向性磁阻(Anisotropic Magnetoresistance, AMR)效應。而在薄膜材料中，因為和塊材的形狀差異，磁場垂直於電流的電阻率又可以分為磁場方向平行於膜面(ρ⊥HIP)和磁場方向垂直於膜面 (ρ⊥HPP)。而依這兩者在單層膜與多層膜中不一樣的行為又可以分作兩種效應。在Co、Ni的單層膜中ρ⊥HIP > ρ⊥HPP，此現象稱為幾何尺寸效應(Geometric Size Effect, GSE)，而在Co/Pt的多層膜中ρ⊥HPP > ρ⊥HIP，與幾何尺寸效應果相反，此現象稱為異向性界面磁阻(Anisotropic Interface Magnetoresistance, AIMR)。而我們在Pd/Ni、Cu/Ni多層膜中更是看到磁場方向垂直於膜面 (ρ⊥HPP)大於磁場平行於電流(ρH‖I)，這是和異向性磁阻(Anisotropic Magnetoresistance, AMR)效應完全相反的現象，我們稱作反常異向性磁阻(Inverse AMR)效應本實驗製作的樣品皆為磁性層與非磁性層交錯的多層膜，磁性層材料為鎳(Ni)，非磁性層的材料則選用接近滿足Stoner 準則(Stoner criterion)之一的鈀(Pd)，以及遠離此準則且自旋軌道交互作用很弱的銅(Cu)當對照組。而為了釐清其發生機制，所以分別做了兩種類型的樣品，第一類是固定單層膜厚改變層數，第二類是固定層數及磁性層(非磁性層)改變非磁性層(磁性層)。完成後的樣品首先以XRD確認樣品的膜厚與品質，接著在10 K和300 K的溫度量測電阻與角度的關係及磁場平行(LMR)、垂直(PMR)於電流時的磁阻，在10K時，以Pd/Ni為材料的多層膜中有看到反常異向性磁阻(Inverse AMR)效應，在300K時，以Cu/Ni為材料的第一類樣品有看到此效應，之後我們還有在不同溫度下量測電阻與角度的關係並找到其效應轉變的溫度。由實驗結果推論，不同材料中觀察到的結果，物理機制並不相同；應該與介面性質有關。但是物理理論上的解釋還需要更進一步地探討。
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Description:	碩士國立政治大學應用物理研究所 101755016 102
Source URI:	http://thesis.lib.nccu.edu.tw/record/#G0101755016
Data Type:	thesis
Appears in Collections:	[Graduate Institute of Applied Physics] Theses

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