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政大典藏 > College of Science > Graduate Institute of Applied Physics > Periodical Articles > Item 140.119/65646

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Title:	Gapless band structure of PbPdO2: A combined first principles calculation and experimental study
Authors:	郭光宇 Chen, S. W.;Huang, S. C.;Guo, G. Y.;Lee, . M.;Chiang, S.;Chen, W. C.;Liang, Y. C.;Lu, K. T.;Chen, J. M.
Contributors:	應物所
Date:	2011.07
Issue Date:	2014-04-28 17:42:23 (UTC+8)
Abstract:	We present experimental evidence of the gapless band structure of PbPdO2 by combined x-ray photoemission and x-ray absorption spectra complemented with first principles band structure calculations. The electronic structure near the Fermi level of PbPdO2 is mainly composed of O 2p and Pd 4d bands, constructing the conduction path along the Pd-O layer in PbPdO2. Pd deficiency in PbPdO2 causes decreased O 2p-Pd 4d and increased O 2p-Pb 6p hybridizations, thereby inducing a small band gap and hence reducing conductivity. Hall measurements indicate that PbPdO2 is a p-type gapless semiconductor with intrinsic hole carriers transporting in the Pd-O layers.
Relation:	Applied Physics Letters, 99, 012103
Data Type:	article
DOI link:	http://dx.doi.org/10.1063/1.3607293
DOI:	10.1063/1.3607293
Appears in Collections:	[Graduate Institute of Applied Physics] Periodical Articles

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