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    Title: 薄膜及其二維複合材料之物理性質
    Physical Properties of Thin Films and Their Two-Dimensional Composites
    Authors: 楊志開
    Contributors: 應物所
    Keywords: 石墨烯;複合材料;二維過渡金屬二硫化物;拓樸絕緣體薄膜
    Graphene;Composite Materials;Two-dimensional Transition Metal Dichalcogenides;Thin Films of Topological Insulators
    Date: 2020-01
    Issue Date: 2025-05-29 11:57:23 (UTC+8)
    Abstract: 薄膜與二維材料是當今凝態物理界最重要的研究課題之一。石墨烯及以石墨烯為基質的複合材料具有奇特的物理性質,不但是重要的基礎物理,也有廣泛的應用潛力。類似的二維結構如過渡金屬二硫化物已被合成且某些物理性質更勝前者或目前的工業材料。拓樸絕緣體以其受時間反轉或晶體對稱性保護之表面電子態傳導,提供無消耗的自旋極化傳輸。由拓樸絕緣體得來的薄膜,如果經由適當的雜質傪雜或與異質原子層接觸,已經證明仍可擁有拓樸表面態或介面態。所有這些二維材料都可藉由第一原理電子結構計算加以研究。本研究計畫的目的包括探索石墨烯複合材料,例如有樣式的氫化或含其它異質原子的石墨烯,以及二維過渡金屬二硫化物如MoS2 與WSe2,並了解這些二維材料經剪裁及疊置後之物理性質。另外的目的則是探究拓樸絕緣體如SnTe 與Sb 的薄膜效應。表面與介面態可藉由雜質傪雜、與異質原子層的接觸、或施加應力加以調制。一旦各種材質的能帶結構可以獲得,相關的傳輸、光學、與磁性將可依此推導出來。研究結果將可應用於奈米電子學、自旋電子學,及量子自旋霍爾效應。參與研究人員將可以其所學投入新一代高科技產業。
    Thin films and two-dimensional materials are one of the most important research topics in condensed matter physics. Graphene and graphene-based composites possess peculiar physical properties that are important in fundamental physics and promise a wide variety of applications. Similar two-dimensional (2D) structures such as 2D transition metal dichalcogenides have been synthesized and may offer even better qualities in some respects than the former or current industrial materials. Topological insulators contribute to electrical conduction through their surface states protected by time-reversal and/or crystalline symmetry and provide dissipationless spin-polarized transport. Thin films derived from topological insulators have been proved to possess topological surface or interface states if proper doping of impurities or contact with layers of heterogeneous atoms are arranged. All of these 2D materials and thin films can be studied through first-principles density functional calculations of their electronic structures. It is the goal of the research proposal to investigate graphene composites, including patterned hydrogenated graphene and other heterogeneous systems, and 2D transition metal dichalcogenides such as MoS2 and WSe2, and to understand how tailoring and stacking of the 2D layers would produce new physical properties. Another purpose is to study the effect of thin films made of topological insulators, such as SnTe and Sb. Surface and interface states of films can be manipulated by doping and contacting with heterogeneous atoms or by exerting strains. Once electronic band structures of the materials are calculated, transport, optics and magnetism can in turn be derived. The results can be applied to nanoelectronics, spintronics, and quantum spin-Hall effect. Members of the research team can contribute their learning to the next generation high-tech industry.
    Relation: 科技部, MOST105-2112-M004-001-MY3, 105.08-108.07
    Data Type: report
    Appears in Collections:[應用物理研究所 ] 國科會研究計畫

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