政大機構典藏-National Chengchi University Institutional Repository(NCCUR):Item 140.119/73682

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政大機構典藏 > 商學院 > 企業管理學系 > 期刊論文 > Item 140.119/73682

Please use this identifier to cite or link to this item: https://nccur.lib.nccu.edu.tw/handle/140.119/73682

Title:	A 90-nm Power Optimization Methodology With Application to the ARM 1136JF-S Microprocessor
Authors:	Kuo;Geng-Sheng;Khan, A.;Watson, P.;Le, D.;Nguyen, T.;Yang, S.;Bennett, P.;Huang, Pokai;Gill, J.;Hawkins, C.;Goodenough, J.;Wang, Demin;Ahmed, I.;Tran, P.;Mak, H.;Kim, Oanh;Martin, F.;Fan, Y.;Ge, D.;Kung, J.;Shek, V. 郭更生
Contributors:	企管系
Date:	2006-08
Issue Date:	2015-03-06 11:09:14 (UTC+8)
Abstract:	An electrical and physical design power optimization methodology and design techniques developed to create an IC with an ARM 1136JF-S microprocessor in 90-nm standard CMOS are presented. Design technology and methodology enhancements to enable multiple supply voltage operation, leakage current and clock rate optimization, single-pass RTL synthesis, VDD selection, power optimization and timing and electrical closure in a multi-VDD domain design are described. A 40% reduction in dynamic and a 46% reduction in leakage power dissipation has been achieved while maintaining a 355-MHz operating clock rate under typical conditions. Functional and electrical design requirements were achieved with the first silicon.
Relation:	IEEE Journal of Solid-state Circuits, 41(8), 1707-1717
Data Type:	article
DOI 連結:	http://dx.doi.org/10.1109/JSSC.2006.877248
DOI:	10.1109/JSSC.2006.877248
Appears in Collections:	[企業管理學系] 期刊論文

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