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    题名: Gapless band structure of PbPdO2: A combined first principles calculation and experimental study
    作者: 郭光宇
    Chen, S. W.;Huang, S. C.;Guo, G. Y.;Lee, . M.;Chiang, S.;Chen, W. C.;Liang, Y. C.;Lu, K. T.;Chen, J. M.
    贡献者: 應物所
    日期: 2011.07
    上传时间: 2014-04-28 17:42:23 (UTC+8)
    摘要: We present experimental evidence of the gapless band structure of PbPdO2 by combined x-ray photoemission and x-ray absorption spectra complemented with first principles band structure calculations. The electronic structure near the Fermi level of PbPdO2 is mainly composed of O 2p and Pd 4d bands, constructing the conduction path along the Pd-O layer in PbPdO2. Pd deficiency in PbPdO2 causes decreased O 2p-Pd 4d and increased O 2p-Pb 6p hybridizations, thereby inducing a small band gap and hence reducing conductivity. Hall measurements indicate that PbPdO2 is a p-type gapless semiconductor with intrinsic hole carriers transporting in the Pd-O layers.
    關聯: Applied Physics Letters, 99, 012103
    数据类型: article
    DOI 連結: http://dx.doi.org/10.1063/1.3607293
    DOI: 10.1063/1.3607293
    显示于类别:[應用物理研究所 ] 期刊論文

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