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    题名: LED產業之專利佈局分析研究-以大尺吋液晶TV背光源技術為例
    Studying on patent analysis of light emitting industry-an empirical study of backlight source for LCD TV
    作者: 黃佩君
    贡献者: 劉江彬
    邱仁鈿
    黃佩君
    关键词: 半導體照明
    發光二極體
    LED背光源液晶電視
    日期: 2008
    上传时间: 2013-09-05 14:45:34 (UTC+8)
    摘要: 知識經濟時代的來臨，對於智慧財產之知識管理成為產業經營皆須重視的一項投入工作，無論國家、政府或產業界均以其擁有之智慧資產作為衡量未來競爭力的指標；其中又以專利代表的技術創新能力備受矚目。雖有許多衡量產業發展的方法，但由於近年來對專利資訊的利用，可用來支援經營管理與商業策略的參考，因此專利分析亦成為產業界的重要工具，不僅高科技產業希望能經由專利技術之分析確實反映產業的技術現況，政策制訂者亦以此作為衡量創新研發成果與科技發展方向的依據。因此，對台灣LED產業發展而言，當務之急除致力技術研發以及累積自身專利之保護傘外，如何藉由專利所提供的訊息瞭解當今產業技術現況，以作為輔助企業決策者參考用，成為相當重要的課題。

    有鑑於此本研究以LED產業之專利佈局為研究，並著重在應用於大尺寸液晶背光源之白光LED進行產業技術個案研究。利用智慧資源規劃方法所述之從產業結構看智慧財產來進行本研究。由於智慧財產的經營必須建構在產業結構的連結，以及與特定產業供應鏈和價值鏈具有因果關係，並有系統且有效的將智慧財產權各類業務與企業各經營構面同步交叉連結，進而發展出與有體財產等值或超值的無體財產。

    基於上述之說明，本研究以智慧資源規劃 ( Intelligence Resources Planning ， IRP ) 之觀念及方法進行，首先以LED產業之產業結構為背景，透過產業結構、技術結構、產品結構先了解整個產業上、中、下游間的關係，藉由產業鏈的分析蒐集與檢索該產業中技術領導公司相關之專利，進而了解其技術現況以及專利佈署情形等資訊，以作為進行下列研究分析用：
    1. 市場佈局概況掌握
    透過專利檢索找出其對應於該產業內各公司技術分佈及產業鏈位置，了解各領先廠商所擁有之技術與產品或有新興的潛在競爭者以及未來可切入利基點等。
    2. 專利佈局之分析研究
    利用產業鏈上的廠商分佈，進一步檢索其專利，並透過專利檢索的分析結果，用以分析每個公司於哪一個年度、哪些區域佈署哪些專利，並以產品/技術結構為基礎，分析產業鏈上廠商對應產品/技術結構的專利分佈，了解LED產業中領先廠商於各國專利佈局狀況，以及個廠商的產品發展情形。再由不同年代對應產品技術結構所產生的專利分佈，進而得知每個公司的專利佈署以及技術發展。除此之外，本研究更以現LED產業於技術發展所遇問題，例如增加LED光取出之技術方式，以該產業上主要領先的廠商為主進行檢索，進而整合產業調查與專利分析成果作為LED 專利分析資料庫，完整掌握LED產業的產業及專利資訊，提供國內廠商未來進行研發工作與專利佈局策略之參考。

    故本研究主要以LED產業結構，以及連結LED產業的專利檢索調研與分析，了解LED產業中領先廠商所擁有的專利技術分佈矩陣分析，進而提出台灣LED廠商於專利佈署上之機會，以及建議台灣LED廠商可充分運用智慧財產之各種形態、群集、組合及區域佈署，進行全球之專利佈局，完整的專利佈署除可作為自身的保護傘外，也可免於國外大廠的專利威脅，進而也可讓自己在市場上佔有一席之地。
    Intellectual Property management becomes an important issue for business management in the age of knowledge-based economy. It is an indicator concerning the evaluation on potential competency of a country, government or industry. Management of Patent, which is deeply involved with technology innovation ability, is especially highlighted. Patent information, among many evaluation methods for industrial development, is used as reference for business management and strategy in recent years. Hence, patent analysis become an important tool for industry. High-tech industry depend on patent analysis to mirror updated technology development while policy makers take it to evaluate R&D results and direct technology developments. Therefore, it is significant for Taiwan LED industry to know updated technology developments and make business strategy through patent information, other than the R&D investments and accumulation of patent barriers.
    Thus, this thesis focuses on the patent strategy in LED industry, specifically on the case study of white LEDs applied in large LCD Backlights. The research will follow the IPR theory (Intellectual Resource Planning) to analyze intellectual property from the perspective of industrial structure. IP management should be built upon the interconnection of industries and is highly involved with the industrial supply chain and value chain. IP management need to systematically intertwines intellectual property and every aspect in industrial management to develop intangible assets of a value equal to or higher than tangible assets.
    The research begins with the construction of supply chain in LED industry through patent analysis on the technology of leading companies to provide a clear picture of the current status of technology and patent mapping. Such research can provide information as follows:
    1. Market plan
    Patent search will show different companies’ technology distribution and positions in the supply chain. It can offer a better understanding for leading companies’ technology and products as well as possible new competitors and potential niche in the market.
    2. Patent map
    Patent search will show the date and area of patent applications of different companies. Through a geographical and historical analysis, the patent map and technology development of different companies in the supply chain can be revealed.
    Besides, the thesis will focus on R&D problems in LED industry, for example, technology to increase extraction efficiency. The research will search patents of the leading companies and integrate industry survey and patent analysis to construct a LED patent analysis database. Through offering complete industrial and patent information in LED industry, the research can provide a reference for domestic companies to develop technology and patent strategy.
    The thesis will combine the industrial chain research and patent analysis in LED industry, further elaborating the patent and technology matrix analysis on the leading companies. It will propose some patent tactics for Taiwan LED companies to fully utilize every aspect of intellectual property to construct a global strategy. A complete patent map can offer better protection against international enterprises and achieve a preferable position in the market.
    參考文獻: 中文文獻
    書籍：
    1.周延鵬，虎與狐的智慧力－智慧資源規劃九把金鑰，第一版，台北：天下文化，2006年3月。
    2.周延鵬，一堂課2000億：智慧財產的戰略及戰術，工商財經數位，2006年11月。
    3.劉江彬，智慧財產管理總論，華泰文化，2004年2月。
    4.王廣發，"半導體元件物理基礎"，儒林圖書。
    5.史光國，"半導體發光二極體及固態照明"，全華科技圖書公司。
    6.史光國， "現代半導體發光及雷射二極體材料技術"，全華科技圖書。
    7.史光國，"半導體發光及雷射二極體材料技術"，全華科技圖書。
    8.吳孟奇、洪勝富、連振炘、龔正， "半導體元件"，東華書局。
    9.吳昌崙、張景學，"半導體製造技術"，新文京開發編著。
    10.孫慶成，"光電概論"，全華科技圖書。
    11.陳隆建，"發光二極體之原理與製程"，全華科技圖書。
    12.許書務、游金湖，"光電元件應用技術(增訂版)"，全華科技圖書。
    13.張勁燕，"電子材料"，五南圖書。
    14.張德安、顧鴻壽、週本達、陳密、樊雨心、週宜衡， "光電平面面板顯示器基本概論"，高立圖書。
    15.詹國禎、朱建國，"電子與光電子材料"，新文京開發出版。
    16.廖顯奎，"當代光電工程"，滄海書局。
    17.劉如憙、王健源，"白光發光二極體製作技術-21 世紀人類的新曙光"，全華科技圖書。
    18.劉如憙、劉宇恒，"發光二極體 用氧氮螢光粉介紹"，全華科技圖書。


    期刊論文
    1.王子傑，「策略聯盟下之平衡計分卡探討-以LED業為例」，元智大學，碩士論文，2003年6月。
    2.江文瑞，「台灣可見光二極體上游產業的競爭策略」，義守大學，碩士論文，2004年6月。
    3.陳裕田，「我國發光二極体產業競爭優勢之研究」，國立清華大學工業工程與工程管理學系，碩士論文，2001年6月。
    4.唐淑芬，(2002) 。「我國發光二極體上游廠商的經營策略與競爭優勢之研究– 以A 公司為例」，國立交通大學經營管理研究所，碩士論文，2002年6月。

    研究報告
    1.王子銘，「LCD TV 美豔秘方– LED 背光模組」，拓墣產業研究所， 2005年1月。
    2.李季達，「2005 年日本LED 發展動向」，光速雙月刊，60期，2005年11月。
    3.吳東嶸，「白光LED發展趨勢剖析」，光連雙月刊，57期，2005年5月。
    4.邱正茂、賴詩文、賴宏仁，「LCD-TV背光源的發展現況─誰能勝出」，工業材料雜誌，221期，2005年5月。
    5.林志勳，「白光LED技術發展現況與趨勢」，IEK產業情報網，2006年7。
    6.林志勳，「發光二體產業發展現況與趨勢」，工研院2007年1月。
    7.林芬卉，「LED 背光在NB 及LCD Monitor 發展機會分析」，DigiTimes Research，2007年4月。
    8.林芬卉，「LED 競逐LCD TV 主流背光地位動向分析」，DigiTimes Research，2007年12月。
    9.林芬卉，「LED 於顯示器光源應用探討」，DigiTimes Research，2006年12月。
    10.林芬卉，「TV 用背光模組產業暨技術發展趨勢」DigiTimes Research，2006年8月。
    11.郭子菱、呂紹旭，「白光LED技術發展演進近況」，光速雙月刊，72期，2007年11月。
    12.張志豪，「LED 用於背光模組之發展及散熱問題」，工業材料雜誌，247期，2007 年7月。
    13.富士經濟，「Special Appli 光源/照明市場現狀 技術 預測」，2005年。
    14.黃振東，「LED封裝及散熱基板材料之現況與發展」，工業材料雜誌，231期，2006年3月。
    15.劉世忠，「發光二極體產業概況」， 產經資訊，46期，2007年。
    16.魯瑞鋒，「發亮中的-於背光模組的應用」，產經資訊，46期，2007年。
    17.蘇裕翔，「LED應用市場擴張快廠商加碼投入熱潮」，光連雙月刊，52期，2007年7月。
    18.蘇裕翔，「從韓國LED展看韓國LED產業動向」，光連雙月刊，61期，2006年1月。

    網路資源
    1.參考LED車頭燈散熱問題，工研院有解，經濟日報，E14版，2007年6月13日。
    2.中國國家半導體照明工程研發及產業聯盟，成立於2004年10月，旨在通過“合作、共贏、創新、發展”，推進半導體照明的技術進步和產業化為目標。

    英文文獻
    英文期刊/書籍：
    1.Albert, M.B., Avery, D., Narin, F., & McAllister, P. (1991). Direct validation of citation counts as indicators of industrially important patents. Research Policy, 20(3)，251-259.
    2.ATIP.“LED’s：R&D and Industry in Taiwan”Asian Technology Information Program(ATIP),1998.
    3.Breitzman, F. A., & Narin, F. (2001). Method and apparatus for choosing a stock portfolio, based on patent indicators, United States Patent, 6175824.
    4.Breitzman, F. A., & Mogee, M. E. (2002). The many applications of patent analysis. Journal of Information Science, 28(3), 187-205.
    5.Brockhoff, K. K. (1992). Instruments for patent data analysis in business firms. Technovation, 12(1), 41-58.
    6.C. H. Chen, S. J. Chang, Y. K. Su, J. K. Sheu, J. F. Chen, C. H. Kuo, and Y. C. Lin, "Nitride-based cascade near white light-emitting diodes," IEEE Photonic Tech. Letts.,vol.14, pp.908-910, 2002.
    7.C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G., Craford, and V. M. Robbins, “High performance AlInGaP visible light emitting diodes,” Appl. Phys. Lett., vol. 57, pp 2937-2939, 1990
    8.D. A. Vanderwater, I.-H. Tan, G. E. Höfler, D. C. Defevere, and F. A. Kish, “High-brightness AlGaInP light emitting diodes,” Proc. IEEE, vol. 85, pp. 1752–1764, 1997.
    9.Deng, Z., Lev, B., & Narin, F. (1999). Science and technology as predictors of stock performance. Financial Analysis Journal, 55(3), 20-32.
    10.Dieter K. Schroder, "Semiconductor Material and Device Characterization," John Wiley & Sons, Inc.
    11.D. V. Morgan, I. M. Al-Ofi, and Y. H. Aliyu, “Indium tin oxide spreading layers for AlGaInP visible LEDs,” Semicond. Sci. Technol., vol.15, pp.67-72, 2000.
    12.Ernst, H. (1995). Patenting Strategies in the German mechanical engineering industry and their relationship to company performance. Technovation, 15(4), 225-240.
    13.Ernst, H. (1998a). Patent portfolios for strategic R&D planning. Journal of Engineering and Technology Management, 15(4), 279-308.
    14.Ernst, H. (2001). Patent applications and subsequent changes of performance：evidence from time-series cross-section analysis on the firm level. Research Policy, 30(1), 143-157.
    15.Ernst, H.(2003). Patent information for strategic technology management. World Patent Information, 25(3), 233-242.
    16.F. A. Kish, F. M. Sterakna, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P.
    Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, “Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al Ga ) In P/GaP light-emitting diodes,” Appl. Phys. Lett., vol. 64, pp. 2839–2841, 1994.
    17.G. B. Stringfellow, and M. George Craford, "High Brightness Light Emitting Diodes," Semiconductors and Semimetas vol. 48, pp. 172-176, 1997.
    18.Hall, H. B., Jaffe, A., & Trajtenberg, M. (2001). The NBER patent citations data file：Lessons, insights and metholodyical tools. Eetrieved January 15, 2007, from http://www.nber.org/papers/w8498
    19.Harhoff, D., Scherer, M. F., & Vopel, K. (2003). Citations, family size, opposition and the value of patent rights. Research Policy, 32(8),1343-1363
    20.H. Sugawara, M. Ishikawa and G. Hatakoshi, “High-efficiency InAlGaP/GaAs visible light-emitting diodes”, Appl Phys. Lett., vol. 58, pp. 1010-1012, 1991.
    21.H. Sugawara, and M. Ishikawa et al., “Semiconductor Emitting device,” U.S. Patent 5 048 035, Sep. 10, 1991.
    22.I. Akasaki, H. Amano, K. Hiramatsu, and N. Sawaki, "High efficiency blue LED utilizing GaN film with AlN buffer layer grown by MOVPE," Inst. Phys. Conf. Ser., no.91, pp.633-636, 1988.
    23.I. Akasaki, H. Amano, Y. Koide, K. Kiramatsu, and N. Sawaki, &quot;Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properites of GaN and Ga1-xAlxN (0<x0.4) films grown on sapphire substrates by MOVPE,&quot; J. Crystal Growth, vol.98, pp.209-219, 1989.
    24.I. D. Goepfert, E. F. Schubert, A. Osinsky, P. E. Norries, and N. N. Faleev, “Experimental and theoretical study of acceptor activation and transport,” J. of Appl. Phys., vol.88, pp.2030-2038, 2000.
    25.I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. SchereP, “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett., pp.2174-2176, 1993.
    26.J. I. Pankove, E. A. Miller, D. Richma n, J. E. Berkeyheiser, &quot;Electroluminescence in GaN,&quot; J. of Luminescence, vol.4, pp.63-66, 1971
    27.J. I. Pankove and T. D. Moustakas, &quot;Gallium Nitride I- Semiconductors and Semimetals,&quot; Academic Press, 1998.
    28.J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. `Shea, M. J. Ludowise, G. Christenson, Y. -C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Götz, N. F. Gardner, R. S. Kern, and S. A. Stockman, “High-power AlGaInN flip-chip light-emitting diodes,” Applied Physics Letters, Vol.78, pp. 3379-3381, 2001 .
    29.J. K. Sheu, G. C. Chi, and M. J. Jou, “Low-Operation Voltage of InGaN/GaN Light-Emitting Diodes by Using a Mg-Doped Al0.15Ga0.85N/GaN Superlattice,” IEEE Electron Device Lett., vol.22, pp.160-162, 2001.
    30.J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang, and Y. K. Su, &quot;White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer,&quot; IEEE Photonics Tech. Letts., vol.14, pp.450-452, 2002.
    31.K. Kumakura and N. Kobayashi, “Increased Electrical Activity of Mg-Acceptors in AlxGa1-xN/GaN Superlattices,” Jpn. J. Appl. Phys., vol.38, pp.L1012–L1014, 1999.
    32.K. Kumakura, T. Makimoto, and N. Kobayashi, “Efficient Hole Generation above 1019cm-3 in Mg-Doped InGaN/GaN Superlattices at Room Temperature,” Jpn. J. Appl. Phys. vol. 39, pp.L195–L196, 2000.
    33.Karki, M.M.S.(1997). Patent Citation analysis：A policy analysis tool. Word Patent Information, 19(4), 269-272
    34.M. C. Wu, J. F. Lin, M. J. Jou, C. M. Chang, B. J. Lee, and Y. T. Tsai, “High reliability of AlGaInP LED`s with efficient transparent contacts for spatially uniform light emission,” IEEE Electron Device Letters, vol.16, pp.482-484, 1995.
    35.M. Koike, N. Shibata, H. Kato, and Y. Takahashi, “Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications,” IEEE J. of Selected Topics in Quantum Electronics, Vol. 8, pp.271-277, 2002.
    36.M.R. Krames et. al., &quot;High-Power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency,&quot; Appl. Phys. Lett., vol.75, pp. 2365, 1999.
    37.N. Holonyak, Jr., and S. F. Bevacqua, “Coherent (Visible) Light Emission from Ga(As1-xPx) Junctions,” Appl. Phys. Lett., vol.1, pp.82-83, 1962.
    38.P. Kozodoy, Y. P. Smorchkova, M. Hansen, H. Xing, S. P. DenBaars, U. K. Mishra, A. W. Sazler, R. Perrin, and W. C. Mitchel, “Polarization-enhanced Mg doping of AlGaN/GaN superlattices,” Appl. Phys. Lett., vol.75, pp.2444-2446, 1999.
    39.R. H. Horng, D. S. Wuu, Y. C. Lien, and W. H. Lan, “Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN,” Appl. Phys. Lett., vol. 79, pp. 2925–2927, 2001.
    40.S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, &quot;Thermal annealing effects on p-type Mg-doped GaN films,&quot; Jpn. J. Appl. Phys., vol.31, pp.L139-L142, 1992.
    41.Thomas, P., & Narin, F. (2004). System and method for producing technology-based price targets for a company stock, United States Patent, 6832211.
    42.S. M. Pan, R. C. Tu, Y. M. Fan, R. C. Yeh, and J. T. Hsu, “Enhanced Output Power of InGaN–GaN Light-Emitting Diodes With High-TransparencyNickel-Oxide–Indium-Tin-Oxide Ohmic Contacts,” IEEE Photonics Tech. Lett., vol.15, pp.646-648, 2003.
    43.S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, T. Mukai, “Superbright Green InGaN Single-Quantum-Well-Structure Light-Enmitting Diodes,” Jpn. J. Appl. Phys. vol.34, pp.L1332-L1335, 1995.
    44.S. W. Jeon, Y. H. Song, H. J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett., vol.78, pp.3265-3267, 2001.
    45.S. Y. Kim, H. W. Jang, and J. L. Lee, “Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact,” Appl. Phys. Lett., vol.82, pp.61-63, 2003.
    46.T. Margalith, O. Buchinsky, D. A. Cohen, A. C. Abare, M. Hansen, S. P. DenBaars, and L. A. Coldren, “Indium tin oxide contacts to gallium ni-tride optoelectronic devices,” Appl. Phys. Lett., vol. 74, pp. 3930–3932, 1999.
    47.Trajtenberg, M. (1990). A penny for your quotes：Rand Journal of Economics, 21(1), 172-187.
    48.T. Nishida, H. Saito, and N. Kobayashi, “Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice,” Appl. Phys. Lett., vol.78, pp.399-400, 2001.
    49.Wartburg, I. V., Teichert, T., & Rost, K. (2005). Inventive progress measured by multi-stage patent citation analysis. Research Policy, 34(10), 1591-1607.
    50.X. Guo, J. W. Graff, and E. F. Schubert, &quot;Photon-recycling for light brightness LEDs,&quot; Compound Semiconductor, vol.6,pp.1-4, 2000.
    51.Y. K. Su, S. J. Chang, C. H. Ko, J. F. Chen, T. M. Kuan, W. H. Lan, W. J. Lin, T. T. Cherng, and J. Webb, “InGaN/GaN light emitting diodes with a p-down structure,” IEEE Transactions on Electron Devices, vol.49, pp.1361-1366, 2002.
    52.Y. Narukawa, I. Niki, K. Izuno, M. Yamada, Y. Murazaki, and T. Mukai,&quot;Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip,&quot; Japanese Journal of Applied Physics Part 2-Letters, vol.41 , pp.371-373, 2002.
    描述: 碩士
    國立政治大學
    智慧財產研究所
    94361004
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