政大機構典藏-National Chengchi University Institutional Repository(NCCUR):Item 140.119/54465

政大機構典藏-National Chengchi University Institutional Repository(NCCUR):Item 140.119/54465

English | 正體中文 | 简体中文 | Post-Print筆數 : 27 | 全文筆數/總筆數 : 113325/144300 (79%)
造訪人次 : 51173117 線上人數 : 834

RC Version 6.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

搜尋範圍

查詢小技巧：

您可在西文檢索詞彙前後加上"雙引號"，以獲取較精準的檢索結果

若欲以作者姓名搜尋，建議至進階搜尋限定作者欄位，可獲得較完整資料

進階搜尋

主頁 ‧ 登入 ‧ 上傳 ‧ 說明 ‧ 關於政大典藏 ‧ 管理

到手機版

政大機構典藏 > 理學院 > 應用物理研究所 > 學位論文 > Item 140.119/54465

請使用永久網址來引用或連結此文件: https://nccur.lib.nccu.edu.tw/handle/140.119/54465

題名:	自旋波在磁性奈米線中的微磁模擬與鈷/鉑，鈷/鈀，鉑/鈀多層膜的電、磁特性 Micromagnetic simulations of spin waves in magnetic nanowires and electrical, magnetic properties of Co/Pt, Co/Pd, and Pt/Pd multilayers
作者:	謝智勛 Hsieh, Chih Hsun
貢獻者:	李尚凡 Lee, Shang Fan 謝智勛 Hsieh, Chih Hsun
關鍵詞:	自旋波垂直異向性磁性多層膜自旋波波導鈷鉑多層膜鈷鈀多層膜 spinwaves perpendicular magnetic anisotropy magnetic multilayer spin waveguide Cobalt Platinum multilayers Cobalt Palladium multilayers
日期:	2011
上傳時間:	2012-10-30 11:08:00 (UTC+8)
摘要:	本論文分為兩部分，第一部分探討使用OOMMF磁性材料模擬軟體來模擬奈米線波導中的自旋波特性，除了以往文獻所熱門的水平異向性薄膜合金中的自旋波，還模擬了垂直異向性的材料，我們模擬了在奈米線一端施加0 ~ 100 GHz外加磁場的自旋波響應。在模擬的結果中，我們發現了水平異向性與垂直異向性的重要差別，垂直異向性比水平異向性波導在頻率小於10 GHz時，少了複雜的自旋波傳遞。而在改變線寬的條件中，我們發現了垂直異向性波導在線寬夠大時，會因退磁場的效應，使得磁矩翻轉，形成許多磁壁，而水平異向性材料則不會，從水平異向性波導大於120 nm線寬的波型中，則會發現自旋波在波導中產生破碎的相位改變。而模擬具有水平寬度變化與垂直厚度變化的週期性邊界，則發現兩者所具有的濾波效果非常相似，而濾波的三個頻段，則是水平寬度變化所截止的頻段，寬於垂直厚度變化的頻段。第二部分為，使用離子濺鍍製成總厚度200 nm，改變交錯層數的(Co/Pt)×N、(Co/Pd) ×N與(Pt/Pd) ×N，三種多層膜的磁性電性分析。Co/Pt與Co/Pd多層膜在Co厚度小於1 nm時為熱門垂直異向性材料，而本實驗專注於Co厚度大於1 nm時介面的特性以及兩種材料的差別。在磁阻的量測上面，得到不同於一般異向性磁阻的規律，一般的異向性磁阻的現象為，平行於電流施加磁場比垂直電流施加磁場所量測的電阻，前者電阻較大(ρ_(H∥I)>ρ_(H⊥I))，但是同為垂直於電流的平行於膜面磁場的電阻(ρ_(H⊥I,in-plane H))與垂直膜面磁場(ρ_(H⊥I,H perpendicular to plane))則呈現了不一樣的行為，尤其為垂直加場的部分，在某些條件的多層膜，會有明顯的垂直方向的異向性磁阻，是為介面所造成額外的垂直方向異向性磁阻，稱作”異向性介面磁阻”(Anisotropic Interface Magnetoresistance)。異向性磁阻與異性向介面磁阻都具有高電阻軸與垂直此軸的低電阻平面，而兩者差別在於異向性磁阻為電流方向軸，而異向性介面磁阻為膜面法向量軸，對於本實驗的量測方法來說，兩軸相差90度角，也因此可辨析兩者不同現象間的差異，並且在我們的分析之中發現，異向性介面磁阻在Co厚度為7 nm以下，才會明顯的顯現。 The thesis is divided into two main parts. The first part discusses the properties of spin waves propagation in magnetic nanowire waveguide by micromagnetic simulation software OOMMF. In addition to in-plane magnetic anisotropy (IMA) in the thin film alloys, we simulate the perpendicular magnetic anisotropy (PMA) of the material. A transverse magnetic field is applied at one end of the waveguide wire and the frequency range is from 0 to 100 GHz. When frequency is less than 10 GHz, we observed that complex modes were generated in the IMA waveguide but there is no spin wave propagates in the PMA waveguide. We also studied the spin wave propagations in wires with different width. Irregular domain wall was generated by demagnetizing field in wider PMA waveguide but IMA waveguide does not have this behavior. In width-modulated and thickness-modulated waveguide spin wave simulations, these two filters have similar results with three band gaps from 0 to 100 GHz and the band gaps in width-modulated wire is wider than in thickness-modulated one. The second part is experimental measurements of the electrical and magnetic properties of (Co/Pt)×N, (Co/Pd) ×N, and (Pt/Pd) ×N multilayers, which are deposited by sputtering and the total thickness is 200nm. Co/Pt and Co/Pd were popular PMA materials when Co thickness is less than 1 nm. We focused on the multilayers with Co thicker than 1nm and the difference between these multilayers. In magnetoresistance measurement, the R-H curve is different from normal anisotropic magnetoresistance (AMR). AMR effect has different resistivity when H∥I or H⊥I, but the measurement results show that ρ_(H⊥I,in-plane H) and ρ_(H⊥I,H perpendicular to plane) also have different MR ratio in specific multilayer configuration. The effect is caused by the interface so it is anisotropic interface magnetoresistance (AIMR) as discussed in the literature. AMR and AIMR have both high resistivity axis and low resistivity plane which is perpendicular to the axis. The difference of two MRs is that the high resistivity axis is parallel to current in AMR and perpendicular to plane in AIMR. In the analysis, the AIMR effect is observed in multilayer with Co thickness less than 7 nm.
參考文獻:	[1] K. Yamada, S. Kasai, Y. Nakatani, K. Kobayashi, H. Kohno, A. Thiaville, and T. Ono, Nat. Mater. 6, 270 (2007). [2] M. Bolte, G. Meier, and C. Bayer, Phys. Rev. B 73, 052406 (2006). [3] J. Podbielski, F. Giesen, and D. Grundler, Phys. Rev. Lett. 96, 167207 (2006). [4] K. S. Lee, D. S. Han, and S. K. Kim, Phys. Rev. Lett. 102, 127202 (2009). [5] K. S. Lee and S. K. Kim, J. Appl. Phys. 104, 053909 (2008). [6] P. F. Garcia, A. D. Meinhaldt, and A. Suna, Appl. Phys. Lett. 47, 178 (1985). [7] F. J. A. den Broeder, V. Hoving, and P. J. H. Bloemen, J. Magn. Magn. Mater. 93, 562 (1991). [8] N. W. E. McGee, M. T. Johnson, J. J. de Vries, and J. ann de Stegge, J. Appl. Phys. 73, 3418 (1993). [9] C.-J. Lin, G. L. Gorman, C. H. Lee, R. F. C. Farrow, E. E. Marinero, H. V Do, H. Notarys, and C. J. Chien, J. Magn. Magn. Mater. 93, 194 (1991). [10] G. H. O. Daalderop, P. J. Kelly, and F. J. den Broeder, Phys. Rev. Lett. 68, 682 (1992). [11] G. Y. Guo, S. Murakami, T.-W. Chen, and N. Nagaosa, Phys. Rev. Lett. 100, 096401 (2008). [12] L. Vila, T. Kimura, and Y. C. Otani, Phys. Rev. Lett. 99, 226604 (2007). [13] A. Kobs, S. Heße, W. Kreuzpaintner, G. Winkler, D. Lott, P. Weinberger, A. Schreyer, and H. P. Oepen, Phys. Rev. Lett. 106, 217207 (2011). [14] S. Chikazumi, Physics of Ferromagnetism, Clarendon Press, 1997. [15] Massimiliano d’Aquino, Nonlinear Magnetization Dynamics in Thin-film and Nanoparticles, Ph.D. thesis, Naples Italy: University of Naples Federico II, 2004. [16] D. Houssameddine, U. Ebels, B. Delaet, B. Rodmacq, I. Firastrau, F. Ponthenier, M. Brunet, C. Thirion, J.-P. Michel, L. Prejbeanu-Buda, M. C. Cyrille, O. Redon, and B. Dieny, Nat. Mater. 6, 447 (2007). [17] J. H. Chang, H. H. Chen, and C. R. Chang, Phys. Rev. B 83, 054425 (2011). [18] J. Nickel. (1995), Magnetoresistance Overview [Online], http://www.hpl.hp.com/techreports/95/HPL-95-60.pdf [19] S. K. Kim, J. Phys. D: Appl. Phys. 43, 264004 (2010). [20] S. S. P. Parkin, M. Hayashi, and L. Thomas, Science 320, 190 (2008). [21] NIST OOMMF software v.1.2a4, http://math.nist.gov/oommf/ [22] C. Kittel, Introduction to Solid State Physics, 8th ed.,John Wiley & Sons, 2004. [23] E. E. Fullerton, I. K. Schuller, H. Vanderstraeten, and Y. Bruynseraede, Phys. Rev. B 45, 9292 (1992). [24] S. Witanachchi, H. Abou Mourad, H. Srikanth, and P. Mukherjee, Appl. Phys. Lett. 90, 052102 (2007). [25] S. Witanachchi, H.Weerasingha, H. Abou Mourad, and P. Mukherjee, Physica B 405, 208-213 (2010). [26] W. Gouda and K. Shiiki, J. Magn. Magn. Mater. 205, 136 (1999). [27] G. Deutscher and H. Fukuyama, Phys. Rev. B 25, 4298 (1982). [28] R. S. Markiewicz and C. J. Rollins, Phys. Rev. B 29, 735 (1984).
描述:	碩士國立政治大學應用物理研究所 99755014 100
資料來源:	http://thesis.lib.nccu.edu.tw/record/#G0099755014
資料類型:	thesis
顯示於類別:	[應用物理研究所 ] 學位論文

文件中的檔案:

檔案	大小	格式	瀏覽次數
501401.pdf	7132Kb	Adobe PDF2	2731	檢視/開啟

在政大典藏中所有的資料項目都受到原著作權保護.

社群 sharing

著作權政策宣告 Copyright Announcement

1.本網站之數位內容為國立政治大學所收錄之機構典藏，無償提供學術研究與公眾教育等公益性使用，惟仍請適度，合理使用本網站之內容，以尊重著作權人之權益。商業上之利用，則請先取得著作權人之授權。
The digital content of this website is part of National Chengchi University Institutional Repository. It provides free access to academic research and public education for non-commercial use. Please utilize it in a proper and reasonable manner and respect the rights of copyright owners. For commercial use, please obtain authorization from the copyright owner in advance.

2.本網站之製作，已盡力防止侵害著作權人之權益，如仍發現本網站之數位內容有侵害著作權人權益情事者，請權利人通知本網站維護人員(nccur@nccu.edu.tw)，維護人員將立即採取移除該數位著作等補救措施。
NCCU Institutional Repository is made to protect the interests of copyright owners. If you believe that any material on the website infringes copyright, please contact our staff(nccur@nccu.edu.tw). We will remove the work from the repository and investigate your claim.

DSpace Software Copyright © 2002-2004 MIT & Hewlett-Packard / Enhanced by NTU Library IR team Copyright © - 回饋