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    題名: Enhanced thermoelectric properties of Cu3SbSe4 by germanium doping
    作者: Chang, Chia-Hsiang;Chen, Cheng-Lung;Chiu, Wan-Ting;Chen, Yang-Yuan
    張家祥;陳洋元
    貢獻者: 應用物理所
    關鍵詞: Electric power factor;Phonons;Semiconducting selenium compounds;Semiconductor doping;Semiconductor materials;Sintering;Spark plasma sintering;Thermal conductivity;Thermal conductivity of solids;Thermoelectric equipment;Thermoelectricity;Alloying effect;Electrical conductivity;Germanium doping;Lattice shrinkages;Lattice thermal conductivity;Thermo-Electric materials;Thermoelectric properties;Thermoelectric transport properties;Germanium
    日期: 2017
    上傳時間: 2017-07-20 15:28:22 (UTC+8)
    摘要: Ge doped Cu3SbSe4 semiconductors with Cu deficiencies were synthesized by melting and spark plasma sintering for the investigation of their thermoelectric transport properties. Ge atoms can successfully substitute Sb lattice sites, and result in lattice shrinkage with increasing Ge content. Doping with Ge not only improves the electrical conductivity but also optimizes the power factor of Cu2.95(Sb1−xGex)Se4. Ge doped specimens also reveal a competition between alloying effects and increased carrier thermal conductivity. The zT enhancement of Ge doped alloys is mainly ascribed to the enhanced power factor and the reduced lattice thermal conductivity. As a result, Cu2.95(Sb0.96Ge0.04)Se4 reaches a maximum zT of 0.7 at 640 K, showing an approximately 35% enhancement over the pristine Cu2.95SbSe4. © 2016 Elsevier B.V.
    關聯: Materials Letters, 186, 227-230
    資料類型: article
    DOI 連結: http://dx.doi.org/10.1016/j.matlet.2016.10.011
    DOI: 10.1016/j.matlet.2016.10.011
    顯示於類別:[經濟學系] 期刊論文

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